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Microstructural analysis of varistors prepared from nanosize ZnO

机译:纳米ZnO制备的压敏电阻的微观结构分析

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摘要

ZnO nanoparticles were prepared by a solid state pyrolysis reaction of zinc acetate dihydrate and oxalic aciddihydrate at 500uC. The course of reaction at various temperatures was followed by XRD. Subsequently varistorswere fabricated from this nano-ZnO material by solid state mixing with various oxide additives and sintering to1050uC. The microstructure of the sintered material was studied using XRD, field emission SEM (FESEM), andEDX, and ZnO grains, bismuth rich regions and spinel phases were identified. Discs made from oxide doped nano-ZnO show considerably higher breakdown voltage (656¡30 V mm21) compared to those prepared frommicrometre sized ZnO (410¡30 V mm21) and commercial varistors (454¡30 V mm21). However, varistors madefrom the nano-ZnO show very low densification and high leakage current, making them unsuitable for devicefabrication.
机译:通过醋酸锌二水合物和草酸二水合物在500uC的固态热解反应制备ZnO纳米颗粒。 XRD跟踪在不同温度下的反应过程。随后,通过与各种氧化物添加剂进行固态混合并烧结至1050uC,由这种纳米ZnO材料制成压敏电阻。利用X射线衍射,场发射扫描电镜(FESEM)和EDX对烧结材料的微观结构进行了研究,并鉴定了ZnO晶粒,富铋区和尖晶石相。与用微米级ZnO(410-30 V mm21)和商用压敏电阻(454-30 V mm21)制成的圆盘相比,用氧化物掺杂的纳米ZnO制成的圆盘具有更高的击穿电压(656-30 V mm21)。然而,由纳米ZnO制成的压敏电阻显示出非常低的致密性和高的漏电流,使其不适合于器件制造。

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